IISc Gallium Nitride Chip Breakthrough marks a significant milestone in India’s semiconductor journey. Five professors and two PhD scholars from the Indian Institute of Science (IISc), Bengaluru, spent nearly 15 years developing Gallium Nitride (GaN) technology, which later evolved into AGNIT Semiconductors, India’s first vertically integrated GaN semiconductor startup. Incubated at IISc and supported by the Ministry of Electronics and Information Technology (MeitY), the company develops high-performance chips for defence, satellite communication, telecommunications, electric mobility, and advanced electronics. Unlike conventional silicon chips, GaN semiconductors offer higher power efficiency, faster switching speeds, and superior performance in demanding applications. The breakthrough strengthens India’s semiconductor self-reliance, reduces dependence on imports, and supports the India Semiconductor Mission, making the country more competitive in strategic deep-tech innovation.
IISc Gallium Nitride Chip Breakthrough: AGNIT Startup Powers India’s Semiconductor Journey
